Renesas Electronics Corp. HSG1003VE- | 搜芯易Sourcengine

Renesas Electronics Corp. HSG1003VE-

生命周期状态
NRFND
REACH
REACH compliant
说明
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
Transistor Application
AMPLIFIER
Collector Current-Max (IC)
0.035 A
Transistor Element Material
SILICON GERMANIUM
Collector-emitter Voltage-Max
3.5 V
Transition Frequency-Nom (fT)
36000 MHz