ROHM Semiconductor HP8S36TB | 搜芯易Sourcengine

ROHM Semiconductor HP8S36TB

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET 2N-CH 30V 27A/80A 8HSOP
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F6
Configuration
2 N-Channel (Half Bridge)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
12
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Peak Reflow Temperature (Cel)
260
Avalanche Energy Rating (Eas) (mJ)
5.3
Pulsed Drain Current-Max (IDM) (A)
48
Drain-source On Resistance-Max (ohm)
0.0133
Time@Peak Reflow Temperature-Max (s)
30