Renesas Electronics Corp. HM5212325FBPC-B60 | 搜芯易Sourcengine

Renesas Electronics Corp. HM5212325FBPC-B60

生命周期状态
Active
REACH
REACH compliant
说明
Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
10
Access Mode
FOUR BANK PAGE BURST
Length (mm)
13
JESD-30 Code
R-PBGA-B90
Memory Width
32
Package Code
LFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
4MX32
Number of Functions
1
Number of Terminals
90
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
6
Number of Words Code
4M
Memory Density (bits)
134217728
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.45
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
4194304
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0