Renesas Electronics Corp. HM51256LZP-12 | 搜芯易Sourcengine

Renesas Electronics Corp. HM51256LZP-12

生命周期状态
Active
REACH
REACH compliant
说明
Fast Page DRAM, 256KX1, 120ns, CMOS, PZIP16
类别
Semiconductors Memory ICs DRAMs FAST PAGE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
CMOS
Access Mode
FAST PAGE
JESD-30 Code
R-PZIP-T16
Memory Width
1
Package Code
SIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
FAST PAGE DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
256
Number of Ports
1
Temperature Grade
COMMERCIAL
Terminal Position
ZIG-ZAG
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Memory Organization
256KX1
Number of Functions
1
Number of Terminals
16
Access Time-Max (ns)
120
Number of Words Code
256K
Memory Density (bits)
262144
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
262144
Package Equivalence Code
ZIP16,.1
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0