Renesas Electronics Corp. HFA3102BZ | 搜芯易Sourcengine

Renesas Electronics Corp. HFA3102BZ

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Dual Long-Tailed Pair Transistor Array
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G14
Configuration
COMPLEX
JEDEC-95 Code
MS-012AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
DUAL
Number of Elements
6
Number of Terminals
14
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
40
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.03
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Collector-emitter Voltage-Max (V)
8
Collector-base Capacitance-Max (pF)
300
Transition Frequency-Nom (fT) (MHz)
10000
Time@Peak Reflow Temperature-Max (s)
30
Width
3.9
Length
8.7