Renesas Electronics Corp. H5N5006LD-E | 搜芯易Sourcengine

Renesas Electronics Corp. H5N5006LD-E

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 3.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN BISMUTH
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
3.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
500 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
3 ohm
Pulsed Drain Current-Max (IDM)
14 A