GS8673ET18BK-625S
GSI Technology, Inc.
- 生命周期状态NRFND
- REACHREACH compliant
- 说明DDR SRAM, 4MX18, CMOS, PBGA260
- 类别
- ECCN3A991.B.2.B
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- Width14 mm
- Length22 mm
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B260
- Memory Width18
- Organization4MX18
- Package CodeHBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, HEAT SINK/SLUG Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density75497472 bit
- Memory IC TypeDDR SRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Number of Words4194304 words
- Parallel/SerialPARALLEL
- Seated Height-Max2.3 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Number of Functions1
- Number of Terminals260
- Number of Words Code4M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.4 V
- Supply Voltage-Min (Vsup)1.3 V
- Supply Voltage-Nom (Vsup)1.35 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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GS8673ET18BK-625S