GSI Technology, Inc. GS8673EQ18BK-500 | 搜芯易Sourcengine

GSI Technology, Inc. GS8673EQ18BK-500

生命周期状态
NRFND
说明
DDR SRAM, 4MX18, 0.4ns, CMOS, PBGA260
类别
Semiconductors Memory ICs SRAMs DDR SRAM

ECCN
3A991.B.2.B
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
14
Length (mm)
22
JESD-30 Code
R-PBGA-B260
Memory Width
18
Package Code
HBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, HEAT SINK/SLUG Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
DDR SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE
Memory Organization
4MX18
Number of Functions
1
Number of Terminals
260
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.4
Number of Words Code
4M
Memory Density (bits)
75497472
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
2.3
Supply Voltage-Max (V)
1.4
Supply Voltage-Min (V)
1.25
Supply Voltage-Nom (V)
1.3
Number of Words (words)
4194304
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED