GS8673EQ18BGK-725S
GSI Technology, Inc.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR SRAM, 4MX18, CMOS, PBGA260
- 类别
- ECCN3A991.B.2.B
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)14
- Length (mm)22
- JESD-30 CodeR-PBGA-B260
- Memory Width18
- Package CodeHBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, HEAT SINK/SLUG Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeDDR SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Memory Organization4MX18
- Number of Functions1
- Number of Terminals260
- Terminal Pitch (mm)1
- Number of Words Code4M
- Memory Density (bits)75497472
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)2.3
- Supply Voltage-Max (V)1.4
- Supply Voltage-Min (V)1.3
- Supply Voltage-Nom (V)1.35
- Number of Words (words)4194304
- Moisture Sensitivity Level3
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
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GS8673EQ18BGK-725S