GSI Technology, Inc. GS8673ED18BK-725S | 搜芯易Sourcengine

GSI Technology, Inc. GS8673ED18BK-725S

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR SRAM, 4MX18, CMOS, PBGA260
类别
Semiconductors Memory ICs SRAMs DDR SRAM

ECCN
3A991.B.2.B
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
14
Length (mm)
22
JESD-30 Code
R-PBGA-B260
Memory Width
18
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
4MX18
Number of Functions
1
Number of Terminals
260
Terminal Pitch (mm)
1
Number of Words Code
4M
Memory Density (bits)
75497472
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
2.3
Supply Voltage-Max (V)
1.4
Supply Voltage-Min (V)
1.3
Supply Voltage-Nom (V)
1.35
Number of Words (words)
4194304
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0