GSI Technology, Inc. GS82612QT19CE-350M | 搜芯易Sourcengine

GSI Technology, Inc. GS82612QT19CE-350M

生命周期状态
Active
REACH
REACH compliant
说明
DDR SRAM, 16MX18, CMOS, CBGA165
类别
Semiconductors Memory ICs SRAMs DDR SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Total Dose
200k Rad(Si) V
Width (mm)
21
Length (mm)
25
JESD-30 Code
R-CBGA-P165
Memory Width
18
Package Code
SPGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, SHRINK PITCH Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Memory IC Type
DDR SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
MILITARY
Terminal Position
BOTTOM
Memory Organization
16MX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1.27
Number of Words Code
16M
Memory Density (bits)
301989888
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
16777216
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55