GSI Technology, Inc. GS82582QT37RE-250M | 搜芯易Sourcengine

GSI Technology, Inc. GS82582QT37RE-250M

生命周期状态
Active
REACH
REACH compliant
说明
QDR II Plus SRAM, 8MX36, 0.45ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs QDR II PLUS SRAM

ECCN
3A991.B.2.B
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Total Dose
50k Rad(Si) V
Width (mm)
15
Length (mm)
17
JESD-30 Code
R-PBGA-B165
Memory Width
36
Package Code
LBGA
Output Enable
NO
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
QDR II PLUS SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
MILITARY
Terminal Position
BOTTOM
Memory Organization
8MX36
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.45
Number of Words Code
8M
Memory Density (bits)
301989888
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.5
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
8388608
Standby Current-Max (A)
0.52
Standby Voltage-Min (V)
1.7
Supply Current-Max (mA)
1140
Package Equivalence Code
BGA165,11X15,40
Clock Frequency-Max (MHz)
250
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55