GSI Technology, Inc. GS8180S36B-300T | 搜芯易Sourcengine

GSI Technology, Inc. GS8180S36B-300T

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Late-Write SRAM, 512KX36, 1.8ns, CMOS, PBGA209
类别
Semiconductors Memory ICs SRAMs LATE-WRITE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
SEPARATE
Technology
CMOS
JESD-30 Code
R-PBGA-B209
Memory Width
36
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
LATE-WRITE SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
512KX36
Number of Terminals
209
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
1.8
Number of Words Code
512K
Memory Density (bits)
18874368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
524288
Standby Voltage-Min (V)
1.7
Package Equivalence Code
BGA209,11X19,50
Clock Frequency-Max (MHz)
300
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
220
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0