GS8162Z18DGD-200
GSI Technology, Inc.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明ZBT SRAM, 1MX18, 6.5ns, CMOS, PBGA165
- 类别
- ECCN3A991.B.2.B
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)13
- Length (mm)15
- JESD-30 CodeR-PBGA-B165
- Memory Width18
- Package CodeLBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeZBT SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureFLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
- Memory Organization1MX18
- Number of Functions1
- Number of Terminals165
- Terminal Pitch (mm)1
- Access Time-Max (ns)6.5
- Number of Words Code1M
- Memory Density (bits)18874368
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.4
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)1048576
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
GS8162Z18DGD-200有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
GS8162Z18DGD-200