GS81314PD18GK-100I
GSI Technology, Inc.
- 生命周期状态Active-Unconfirmed
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明QDR SRAM, 8MX18, CMOS, PBGA260
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeSEPARATE
- TechnologyCMOS
- Width (mm)14
- Length (mm)22
- JESD-30 CodeR-PBGA-B260
- Memory Width18
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeQDR SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization8MX18
- Number of Functions1
- Number of Terminals260
- Terminal Pitch (mm)1
- Number of Words Code8M
- Memory Density (bits)150994944
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)2.3
- Supply Voltage-Max (V)1.3
- Supply Voltage-Min (V)1.15
- Supply Voltage-Nom (V)1.2
- Number of Words (words)8388608
- Standby Voltage-Min (V)1.15
- Package Equivalence CodeBGA260,13X20,40
- Clock Frequency-Max (MHz)1000
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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GS81314PD18GK-100I