GSI Technology, Inc. GS81314LD36GK-106 | 搜芯易Sourcengine

GSI Technology, Inc. GS81314LD36GK-106

生命周期状态
Active
REACH
REACH compliant
说明
QDR SRAM, 4MX36, CMOS, PBGA260
类别
Semiconductors Memory ICs SRAMs QDR SRAM

ECCN
3A991.B.2.B
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
14
Length (mm)
22
JESD-30 Code
R-PBGA-B260
Memory Width
36
Package Code
HBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, HEAT SINK/SLUG Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
QDR SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
4MX36
Number of Functions
1
Number of Terminals
260
Terminal Pitch (mm)
1
Number of Words Code
4M
Memory Density (bits)
150994944
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
2.3
Supply Voltage-Max (V)
1.35
Supply Voltage-Min (V)
1.15
Supply Voltage-Nom (V)
1.2
Number of Words (words)
4194304
Moisture Sensitivity Level
4
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0