GSI Technology, Inc. GS81302R18E-300 | 搜芯易Sourcengine

GSI Technology, Inc. GS81302R18E-300

生命周期状态
Active
说明
DDR II SRAM, 8MX18, 0.45ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs DDR II SRAM

ECCN
3A991.B.2.B
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
15
Length (mm)
17
JESD-30 Code
R-PBGA-B165
Memory Width
18
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR II SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn63Pb37)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
PIPELINED ARCHITECTURE
Memory Organization
8MX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.45
Number of Words Code
8M
Memory Density (bits)
150994944
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.5
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
8388608
Moisture Sensitivity Level
3
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0