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GS81302DT19RE-250M

GSI Technology, Inc.

GSI Technology, Inc. GS81302DT19RE-250M
  • ECCN
    3A991.B.2.B
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    SEPARATE
  • Technology
    CMOS
  • Total Dose
    50k Rad(Si) V
  • Width (mm)
    15
  • Length (mm)
    17
  • JESD-30 Code
    R-PBGA-B165
  • Memory Width
    18
  • Package Code
    LBGA
  • Output Enable
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, LOW PROFILE Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    QDR II PLUS SRAM
  • Operating Mode
    SYNCHRONOUS
  • Number of Ports
    1
  • Parallel/Serial
    PARALLEL
  • Temperature Grade
    MILITARY
  • Terminal Position
    BOTTOM
  • Memory Organization
    8MX18
  • Number of Functions
    1
  • Number of Terminals
    165
  • Terminal Pitch (mm)
    1
  • Access Time-Max (ns)
    0.45
  • Number of Words Code
    8M
  • Memory Density (bits)
    150994944
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1.5
  • Supply Voltage-Max (V)
    1.9
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    8388608
  • Standby Current-Max (A)
    0.52
  • Standby Voltage-Min (V)
    1.7
  • Supply Current-Max (mA)
    850
  • Package Equivalence Code
    BGA165,11X15,40
  • Clock Frequency-Max (MHz)
    250
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55

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GS81302DT19RE-250M
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GS81302DT19RE-250M