GSI Technology, Inc. GS81302D38GE-375T | 搜芯易Sourcengine

GSI Technology, Inc. GS81302D38GE-375T

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
QDR II Plus SRAM, 4MX36, 0.45ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs QDR II PLUS SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
SEPARATE
Technology
CMOS
Width (mm)
15
Length (mm)
17
JESD-30 Code
R-PBGA-B165
Memory Width
36
Package Code
LBGA
Output Enable
NO
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
QDR II PLUS SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position
BOTTOM
Memory Organization
4MX36
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.45
Number of Words Code
4M
Memory Density (bits)
150994944
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.5
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
4194304
Standby Current-Max (A)
0.255
Standby Voltage-Min (V)
1.7
Supply Current-Max (mA)
1170
Package Equivalence Code
BGA165,11X15,40
Clock Frequency-Max (MHz)
375
Moisture Sensitivity Level
3
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0