Intel Corporation GE28F008B3BA70 | 搜芯易Sourcengine

Intel Corporation GE28F008B3BA70

生命周期状态
Transferred
说明
Flash, 1MX8, 70ns, PBGA46
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
NOR TYPE
Boot Block
BOTTOM
Technology
CMOS
Toggle Bit
NO
Width (mm)
6.5
Length (mm)
7.91
Data Polling
NO
JESD-30 Code
R-PBGA-B46
Memory Width
8
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
BOTTOM BOOT BLOCK
Memory Organization
1MX8
Number of Functions
1
Number of Terminals
46
Sector Size (words)
8K,64K
Terminal Pitch (mm)
0.75
Access Time-Max (ns)
70
Number of Words Code
1M
Memory Density (bits)
8388608
Package Body Material
PLASTIC/EPOXY
Command User Interface
YES
Number of Sectors/Size
8,15
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.7
Supply Voltage-Nom (V)
3
Number of Words (words)
1048576
Programming Voltage (V)
2.7
Standby Current-Max (A)
5.0E-6
Supply Current-Max (mA)
55
Package Equivalence Code
BGA45,6X8,30
Endurance (Write/Erase Cycles)
100000
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40