Renesas Electronics Corp. FS22SM-12A | 搜芯易Sourcengine

Renesas Electronics Corp. FS22SM-12A

生命周期状态
NRFND
REACH
REACH compliant
说明
Power Field-Effect Transistor, 22A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
22 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.3 ohm
Pulsed Drain Current-Max (IDM)
66 A