FM25V20A-DG
Cypress Semiconductor Corporation
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明CYPRESS - INFINEON TECHNOLOGIES - FM25V20A-DG - F-RAM, NV, 2MBIT, 40MHZ, DFN-8
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.71
- SB Code8542.32.00.70
- TechnologyCMOS
- Width (mm)5.0000
- Length (mm)6.0000
- JESD-30 CodeR-PDSO-N8
- Memory Width8
- Package CodeHVSON
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
- Surface MountYES
- Terminal FormNO LEAD
- J-STD-609 Codee3
- Memory IC TypeFRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialSERIAL
- Serial Bus TypeSPI
- Terminal FinishMatte Tin (Sn)
- Write ProtectionHARDWARE/SOFTWARE
- Terminal PositionDUAL
- Additional Featurealso operates with 2minv supply @ 25 mhz and 2kv esd availabe
- Memory Organization256KX8
- Number of Functions1
- Number of Terminals8
- Terminal Pitch (mm)1.270
- Number of Words Code256K
- Memory Density (bits)2097152.0000000000000000
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)0.8000
- Supply Voltage-Max (V)3.60000
- Supply Voltage-Min (V)2.70000
- Supply Voltage-Nom (V)3.3
- Data Retention Time-Min10
- Number of Words (words)262144.0000000000000000
- Standby Current-Max (A)0.000250000000000
- Standby Voltage-Min (V)2.700000
- Supply Current-Max (mA)3.000000000000000
- Package Equivalence CodeSOLCC8,.25
- Clock Frequency-Max (MHz)40.00000
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
- Endurance (Write/Erase Cycles)100000000000000.000000000000000
- Operating Temperature-Max (Cel)85.0
- Operating Temperature-Min (Cel)-40.0
- Time@Peak Reflow Temperature-Max (s)30
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FM25V20A-DG