Analog Devices, Inc. DS1350ABL-70-IND | 搜芯易Sourcengine

Analog Devices, Inc. DS1350ABL-70-IND

生命周期状态
Active
说明
Non-Volatile SRAM Module, 512KX8, 70ns, MOS, PDSO34
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
MOS
Width (mm)
21.5265
Length (mm)
24.5745
JESD-30 Code
R-PDSO-U34
Memory Width
8
Package Code
SOJ-I
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J INVERTED
Memory IC Type
NON-VOLATILE SRAM MODULE
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Additional Feature
WITH BATTERY MONITOR
Memory Organization
512KX8
Number of Functions
1
Number of Terminals
34
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
70
Number of Words Code
512K
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
6.35
Supply Voltage-Max (V)
5.25
Supply Voltage-Min (V)
4.75
Supply Voltage-Nom (V)
5
Number of Words (words)
524288
Standby Current-Max (A)
0.00015
Supply Current-Max (mA)
85
Package Equivalence Code
MODULE,34LEAD,1.0
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40