Analog Devices, Inc. DS1265Y | 搜芯易Sourcengine

Analog Devices, Inc. DS1265Y

生命周期状态
Active
说明
Non-Volatile SRAM Module, 1MX8, 70ns, CMOS, PDIP36
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
JESD-30 Code
R-PDIP-T36
Memory Width
8
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
NON-VOLATILE SRAM MODULE
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
10 YEARS OF DATA RETENTION PERIOD
Memory Organization
1MX8
Number of Functions
1
Number of Terminals
36
Access Time-Max (ns)
70
Number of Words Code
1M
Memory Density (bits)
8388608
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
1048576
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0