Analog Devices, Inc. DS1230YP-70IND+ | 搜芯易Sourcengine

Analog Devices, Inc. DS1230YP-70IND+

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
256k Nonvolatile SRAM
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
23.495
Length (mm)
25.019
JESD-30 Code
R-XDMA-C34
Memory Width
8
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
YES
Terminal Form
C BEND
J-STD-609 Code
e3
Memory IC Type
NON-VOLATILE SRAM MODULE
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
32KX8
Number of Functions
1
Number of Terminals
34
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
70
Number of Words Code
32K
Memory Density (bits)
262144
Package Body Material
UNSPECIFIED
Seated Height-Max (mm)
6.85
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
32768
Standby Current-Max (A)
0.0006
Supply Current-Max (mA)
85
Package Equivalence Code
MODULE,34LEAD,1.0
Moisture Sensitivity Level
3
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40