Analog Devices, Inc. DS1230AB-200IND+ | 搜芯易Sourcengine

Analog Devices, Inc. DS1230AB-200IND+

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Non-Volatile SRAM Module, 32KX8, 200ns, CMOS
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
JESD-30 Code
R-XDMA-P28
Memory Width
8
Organization
32KX8
Package Code
DIP
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Memory Density
262144 bit
Memory IC Type
NON-VOLATILE SRAM MODULE
Operating Mode
ASYNCHRONOUS
Terminal Pitch
2.54 mm
Access Time-Max
200 ns
Number of Words
32768 words
Parallel/Serial
PARALLEL
Terminal Finish
Matte Tin (Sn) - annealed
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Supply Current-Max
85 mA
Number of Functions
1
Number of Terminals
28
Standby Current-Max
0.0006 Amp
Number of Words Code
32K
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Package Equivalence Code
DIP28,.6
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Max (Vsup)
5.25 V
Supply Voltage-Min (Vsup)
4.75 V
Supply Voltage-Nom (Vsup)
5 V