Diodes Incorporated DMB53D0UV-13 | 搜芯易Sourcengine

Diodes Incorporated DMB53D0UV-13

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET NMOS+NPN TRANS SOT-563
类别
Semiconductors Transistors Other Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
0.3 V
JESD-30 Code
R-PDSO-F6
Configuration
SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Reference Standard
AEC-Q101
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.16 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
50 V
DC Current Gain-Min (hFE)
200
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.25 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
4 ohm