Cypress Semiconductor Corporation DM2200J-20 | 搜芯易Sourcengine

Cypress Semiconductor Corporation DM2200J-20

生命周期状态
Transferred
REACH
REACH compliant
说明
Cache DRAM, 4MX1, 20ns, CMOS, PDSO28
类别
Semiconductors Memory ICs DRAMs CACHE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
CMOS
JESD-30 Code
R-PDSO-J28
Memory Width
1
Package Code
SOJ
Self Refresh
NO
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory IC Type
CACHE DRAM
Refresh Cycles
1024
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
4MX1
Number of Terminals
28
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
20
Number of Words Code
4M
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
4194304
Standby Current-Max (A)
0.001
Supply Current-Max (mA)
120
Package Equivalence Code
SOJ28,.34
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0