Taiwan Semiconductor DBL103G | 搜芯易Sourcengine

Taiwan Semiconductor DBL103G

生命周期状态
Active
说明
Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon
类别
Semiconductors Diodes Bridge Rectifier Diodes BRIDGE RECTIFIER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
BRIDGE RECTIFIER DIODE
JESD-30 Code
R-PDIP-T4
Configuration
BRIDGE, 4 ELEMENTS
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Terminal Finish
Matte Tin (Sn)
Number of Phases
1
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
4
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Output Current-Max (A)
1
Forward Voltage-Max (V)
1.1
Breakdown Voltage-Min (V)
200
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max (V)
200
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Non-rep Pk Forward Current-Max (A)
40
Screening Level / Reference Standard
UL RECOGNIZED