Rochester Electronics, LLC CY7C182-12DMB | 搜芯易Sourcengine

Rochester Electronics, LLC CY7C182-12DMB

生命周期状态
Active
说明
Cache SRAM, 8KX9, 12ns, CMOS, CDIP28
类别
Semiconductors Memory ICs SRAMs CACHE SRAM

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
7.62
Length (mm)
37.0205
JESD-30 Code
R-GDIP-T28
Memory Width
9
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
CACHE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
MILITARY
Terminal Position
DUAL
Additional Feature
AUTOMATIC POWER-DOWN
Memory Organization
8KX9
Number of Functions
1
Number of Terminals
28
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
12
Number of Words Code
8K
Memory Density (bits)
73728
Package Body Material
CERAMIC, GLASS-SEALED
Seated Height-Max (mm)
5.08
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
8192
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED