Cypress Semiconductor Corporation CY7C1366C-225BZI | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY7C1366C-225BZI

生命周期状态
Discontinued
REACH
REACH compliant
说明
Cache DRAM Module, 256KX36, 2.8ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs CACHE DRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
13
Length (mm)
15
JESD-30 Code
R-PBGA-B165
Memory Width
36
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
CACHE DRAM MODULE
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
256KX36
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
2.8
Number of Words Code
256K
Memory Density (bits)
9437184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3.135
Supply Voltage-Nom (V)
3.3
Number of Words (words)
262144
Standby Current-Max (A)
0.03
Standby Voltage-Min (V)
3.14
Supply Current-Max (mA)
250
Package Equivalence Code
BGA165,11X15,40
Clock Frequency-Max (MHz)
225
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40