Cypress Semiconductor Corporation CY7C1356C-200BZI | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY7C1356C-200BZI

生命周期状态
Discontinued
说明
ZBT SRAM, 512KX18, 3.2ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
13
Length (mm)
15
JESD-30 Code
R-PBGA-B165
Memory Width
18
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
PIPELINED ARCHITECTURE
Memory Organization
512KX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
3.2
Number of Words Code
512K
Memory Density (bits)
9437184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3.135
Supply Voltage-Nom (V)
3.3
Number of Words (words)
524288
Standby Current-Max (A)
0.04
Standby Voltage-Min (V)
3.14
Supply Current-Max (mA)
220
Package Equivalence Code
BGA165,11X15,40
Clock Frequency-Max (MHz)
200
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
220
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40