Cypress Semiconductor Corporation CY7C1354V25-100BAC | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY7C1354V25-100BAC

生命周期状态
Discontinued
说明
ZBT SRAM, 256KX36, 5ns, CMOS, PBGA119
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B119
Memory Width
36
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
256KX36
Number of Functions
1
Number of Terminals
119
Access Time-Max (ns)
5
Number of Words Code
256K
Memory Density (bits)
9437184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
2.625
Supply Voltage-Min (V)
2.375
Supply Voltage-Nom (V)
2.5
Number of Words (words)
262144
Standby Current-Max (A)
0.01
Standby Voltage-Min (V)
2.38
Supply Current-Max (mA)
300
Package Equivalence Code
BGA119(UNSPEC)
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0