Rochester Electronics, LLC CY7C1031-8JC | 搜芯易Sourcengine

Rochester Electronics, LLC CY7C1031-8JC

生命周期状态
Active
说明
Cache SRAM, 64KX18, 8.5ns, CMOS, PQCC52
类别
Semiconductors Memory ICs SRAMs CACHE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
19.1262
Length (mm)
19.1262
JESD-30 Code
S-PQCC-J52
Memory Width
18
Package Code
QCCJ
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
J BEND
Memory IC Type
CACHE SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Additional Feature
TWO BIT WRAPAROUND COUNTER
Memory Organization
64KX18
Number of Functions
1
Number of Terminals
52
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
8.5
Number of Words Code
64K
Memory Density (bits)
1179648
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
5.08
Supply Voltage-Max (V)
5.25
Supply Voltage-Min (V)
4.75
Supply Voltage-Nom (V)
5
Number of Words (words)
65536
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED