Cypress Semiconductor Corporation CY7C1011CV33-12BVI | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY7C1011CV33-12BVI

生命周期状态
Active
说明
CY7C1011CV33-12BVI
类别
Semiconductors Memory ICs

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
6.0000
Length (mm)
8.0000
JESD-30 Code
R-PBGA-B48
Memory Width
16
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
STANDARD SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
128KX16
Number of Functions
1
Number of Terminals
48
Terminal Pitch (mm)
0.750
Access Time-Max (ns)
12.0000000000000000
Number of Words Code
128K
Memory Density (bits)
2097152.0000000000000000
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.0000
Supply Voltage-Max (V)
3.60000
Supply Voltage-Min (V)
3.00000
Supply Voltage-Nom (V)
3.3
Number of Words (words)
131072.0000000000000000
Standby Current-Max (A)
0.010000000000000
Standby Voltage-Min (V)
3.000000
Supply Current-Max (mA)
95.000000000000000
Package Equivalence Code
BGA48,6X8,30
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85.0
Operating Temperature-Min (Cel)
-40.0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED