Cypress Semiconductor Corporation CY62136VLL-70ZSXE | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY62136VLL-70ZSXE

生命周期状态
EOL
RoHS
符合RoHS标准
说明
CY62136VLL-70ZSXE
类别
Semiconductors Memory ICs

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
10.1600
Length (mm)
18.4150
JESD-30 Code
R-PDSO-G44
Memory Width
16
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Memory IC Type
STANDARD SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Temperature Grade
AUTOMOTIVE
Terminal Position
DUAL
Memory Organization
128KX16
Number of Functions
1
Number of Terminals
44
Terminal Pitch (mm)
0.800
Access Time-Max (ns)
70.0000000000000000
Number of Words Code
128K
Memory Density (bits)
2097152.0000000000000000
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.1940
Supply Voltage-Max (V)
3.60000
Supply Voltage-Min (V)
2.70000
Supply Voltage-Nom (V)
3
Number of Words (words)
131072.0000000000000000
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
125.0
Operating Temperature-Min (Cel)
-40.0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED