Cypress Semiconductor Corporation CY22E016L-SZ35XI | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY22E016L-SZ35XI

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDSO28
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
7.55
Length (mm)
17.905
JESD-30 Code
R-PDSO-G28
Memory Width
8
Package Code
SOP
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e4
Memory IC Type
NON-VOLATILE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
2KX8
Number of Functions
1
Number of Terminals
28
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
35
Number of Words Code
2K
Memory Density (bits)
16384
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
2.67
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
2048
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED