Renesas Electronics Corp. CY20AAJ-8H#F00 | 搜芯易Sourcengine

Renesas Electronics Corp. CY20AAJ-8H#F00

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Insulated-Gate Bipolar Transistors (IGBT)
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
YES
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
6 V
Operating Temperature-Max
150 Cel
Gate-emitter Thr Voltage-Max
1.5 V
Collector-emitter Voltage-Max
400 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
3.95
Length
4.9