Cypress Semiconductor Corporation CY14E256LA-ZS25XI | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY14E256LA-ZS25XI

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Non-Volatile SRAM, 32KX8, 25ns, CMOS, PDSO44
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
10.16
Length (mm)
18.415
JESD-30 Code
R-PDSO-G44
Memory Width
8
Package Code
TSOP2
Output Enable
YES
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e4
Memory IC Type
NON-VOLATILE SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
Terminal Finish
NICKEL PALLADIUM GOLD
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
32KX8
Number of Functions
1
Number of Terminals
44
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
25
Number of Words Code
32K
Memory Density (bits)
262144
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.194
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
32768
Standby Current-Max (A)
0.008
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
70
Package Equivalence Code
TSOP44,.46,32
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
20