Cypress Semiconductor Corporation CY14E116N-Z45XI | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY14E116N-Z45XI

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Non-Volatile SRAM, 1MX16, 45ns, CMOS, PDSO48
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
12
Length (mm)
18.4
JESD-30 Code
R-PDSO-G48
Memory Width
16
Package Code
TSOP1
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory IC Type
NON-VOLATILE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
1MX16
Number of Functions
1
Number of Terminals
48
Terminal Pitch (mm)
0.5
Access Time-Max (ns)
45
Number of Words Code
1M
Memory Density (bits)
16777216
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
1048576
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED