Cypress Semiconductor Corporation CY14E108N-BA20XIT | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY14E108N-BA20XIT

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Non-Volatile SRAM, 512KX16, 20ns, CMOS, PBGA48
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
6
Length (mm)
10
JESD-30 Code
R-PBGA-B48
Memory Width
16
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
NON-VOLATILE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
512KX16
Number of Functions
1
Number of Terminals
48
Terminal Pitch (mm)
0.75
Access Time-Max (ns)
20
Number of Words Code
512K
Memory Density (bits)
8388608
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
524288
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40