Cypress Semiconductor Corporation CY14E104K-ZS15XI | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY14E104K-ZS15XI

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Non-Volatile SRAM, 512KX8, 15ns, CMOS, PDSO44
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
10.16
Length (mm)
18.415
JESD-30 Code
R-PDSO-G44
Memory Width
8
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e4
Memory IC Type
NON-VOLATILE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
NICKEL PALLADIUM GOLD
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
512KX8
Number of Functions
1
Number of Terminals
44
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
15
Number of Words Code
512K
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.194
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
524288
Standby Current-Max (A)
0.003
Supply Current-Max (mA)
75
Package Equivalence Code
TSOP44,.46,32
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
20