Cypress Semiconductor Corporation CY14B104NA-ZS25XET | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY14B104NA-ZS25XET

生命周期状态
Transferred
REACH
REACH compliant
说明
Non-Volatile SRAM, 256KX16, 25ns, CMOS, PDSO44
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM

ECCN
3A991.B.2.A
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
10.16
Length (mm)
18.415
JESD-30 Code
R-PDSO-G44
Memory Width
16
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory IC Type
NON-VOLATILE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
PURE TIN
Temperature Grade
AUTOMOTIVE
Terminal Position
DUAL
Memory Organization
256KX16
Number of Functions
1
Number of Terminals
44
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
25
Number of Words Code
256K
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.194
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
262144
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40