Cypress Semiconductor Corporation CY14B104LA-ZS25XI | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY14B104LA-ZS25XI

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
CYPRESS - INFINEON TECHNOLOGIES - CY14B104LA-ZS25XI - NV SRAM, 512K X 8BIT, 25NS, TSOP-II-44
类别
Semiconductors Memory ICs

ECCN
3A991.B.2.A
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
10.1600
Length (mm)
18.4150
JESD-30 Code
R-PDSO-G44
Memory Width
8
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e4
Memory IC Type
NON-VOLATILE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
512KX8
Number of Functions
1
Number of Terminals
44
Terminal Pitch (mm)
0.800
Access Time-Max (ns)
25.0000000000000000
Number of Words Code
512K
Memory Density (bits)
4194304.0000000000000000
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.1940
Supply Voltage-Max (V)
3.60000
Supply Voltage-Min (V)
2.70000
Supply Voltage-Nom (V)
3
Number of Words (words)
524288.0000000000000000
Standby Current-Max (A)
0.005000000000000
Supply Current-Max (mA)
70.000000000000000
Package Equivalence Code
TSOP44,.46,32
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85.0
Operating Temperature-Min (Cel)
-40.0
Time@Peak Reflow Temperature-Max (s)
20