Texas Instruments Incorporated CSD85301Q2T | 搜芯易Sourcengine

Texas Instruments Incorporated CSD85301Q2T

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection 6-WSON -55 to 150
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
S-PDSO-N6
Configuration
2 N-Channel (Dual)
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
5
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Feedback Cap-Max (Crss) (pF)
62
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
3.8
Pulsed Drain Current-Max (IDM) (A)
26
Drain-source On Resistance-Max (ohm)
0.039
Time@Peak Reflow Temperature-Max (s)
30