Texas Instruments Incorporated CSD25501F3T | 搜芯易Sourcengine

Texas Instruments Incorporated CSD25501F3T

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PBGA-B3
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BUTT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Nickel/Gold (Ni/Au)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
0.5
Drain Current-Max (ID) (A)
-3.6
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Feedback Cap-Max (Crss) (pF)
5.3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Drain-source On Resistance-Max (ohm)
0.125
Time@Peak Reflow Temperature-Max (s)
30