Texas Instruments Incorporated CSD25202W15T | 搜芯易Sourcengine

Texas Instruments Incorporated CSD25202W15T

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
-20-V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 26 mOhm, gate ESD protection 9-DSBGA -55 to 150
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.40
SB Code
8541.21.00.40

Application
SWITCHING
JESD-30 Code
S-PBGA-B9
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
9
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
0.5
Drain Current-Max (ID) (A)
-4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Feedback Cap-Max (Crss) (pF)
27
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
0.5
Drain-source On Resistance-Max (ohm)
0.052
Time@Peak Reflow Temperature-Max (s)
30