Texas Instruments Incorporated CSD23382F4 | 搜芯易Sourcengine

Texas Instruments Incorporated CSD23382F4

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection 3-PICOSTAR 0 to 0
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.40
SB Code
8541.21.00.40

Application
SWITCHING
JESD-30 Code
R-XBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Nickel/Gold (Ni/Au)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
0.5
Drain Current-Max (ID) (A)
-3.5
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
12
Feedback Cap-Max (Crss) (pF)
16.6
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Drain-source On Resistance-Max (ohm)
0.105
Time@Peak Reflow Temperature-Max (s)
30