Texas Instruments Incorporated CSD13306WT | 搜芯易Sourcengine

Texas Instruments Incorporated CSD13306WT

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA -55 to 150
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PBGA-B6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position
BOTTOM
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.9
Drain Current-Max (ID) (A)
3.5
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
12
Feedback Cap-Max (Crss) (pF)
294
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
44
Drain-source On Resistance-Max (ohm)
0.0155
Time@Peak Reflow Temperature-Max (s)
30