CALIFORNIA EASTERN LABORATORIES CE3514M4-C2 | 搜芯易Sourcengine

CALIFORNIA EASTERN LABORATORIES CE3514M4-C2

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF MOSFET 4V 0.068A 4-Pin Case M04 T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Power Gain-Min (Gp) (dB)
10.5
Drain Current-Max (ID) (A)
0.015
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
3
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55